Conference
Exploring the design space of rugged seven lithographic level silicon carbide vertical JFETs for the development of 1200-V, 50-A devices
العنوان: | Exploring the design space of rugged seven lithographic level silicon carbide vertical JFETs for the development of 1200-V, 50-A devices |
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المؤلفون: | Veliadis, V., McCoy, M., Stewart, E., McNutt, T., Van Campen, S., Potyraj, P., Scozzie, C. |
المصدر: | 2007 International Semiconductor Device Research Symposium |
بيانات النشر: | IEEE |
سنة النشر: | 2007 |
نوع الوثيقة: | conference object |
اللغة: | unknown |
DOI: | 10.1109/isdrs.2007.4422415 |
الاتاحة: | http://dx.doi.org/10.1109/isdrs.2007.4422415 http://xplorestaging.ieee.org/ielx5/4422221/4422222/04422415.pdf?arnumber=4422415 |
رقم الانضمام: | edsbas.2E61DCB4 |
قاعدة البيانات: | BASE |
DOI: | 10.1109/isdrs.2007.4422415 |
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