Academic Journal

Temperature dependence of GaN high breakdown voltage diode rectifiers

التفاصيل البيبلوغرافية
العنوان: Temperature dependence of GaN high breakdown voltage diode rectifiers
المؤلفون: Department of Electrical Engineering, National Central University, Chung-Li, Taiwan ( host institution ), Chyi, J.-I ( author ), Lee, C.-M ( author ), Chuo, C.-C ( author ), Cao, X.A ( author ), Dang, G.T ( author ), Zhang, A.P ( author ), Ren, F ( author ), Pearton, S.J ( author ), Chu, S.N.G ( author ), Wilson, R.G ( author )
بيانات النشر: Elsevier Ltd
سنة النشر: 2000
المجموعة: University of Florida: Digital Library Center
الوصف: Solid State Electronics 44 (2000) 613-617. doi:10.1016/S0038-1101(99)00183-5 ; 2016-03-04T18:46:15Z
نوع الوثيقة: text
وصف الملف: Pages 613-617
اللغة: English
Relation: Solid State Electronics; S0038-1101(99)00183-5; SSE; 2231; http://ufdc.ufl.edu/LS00509510/00001
DOI: 10.1016/S0038-1101(99)00183-5
الاتاحة: https://doi.org/10.1016/S0038-1101(99)00183-5
http://ufdc.ufl.edu/LS00509510/00001
Rights: This item is licensed with the Creative Commons Attribution No Derivatives License. This license allows for redistribution, commercial and non-commercial, as long as it is passed along unchanged and in whole, with credit to the author. © 2000
رقم الانضمام: edsbas.2DFA7F55
قاعدة البيانات: BASE
الوصف
DOI:10.1016/S0038-1101(99)00183-5