Academic Journal
Temperature dependence of GaN high breakdown voltage diode rectifiers
العنوان: | Temperature dependence of GaN high breakdown voltage diode rectifiers |
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المؤلفون: | Department of Electrical Engineering, National Central University, Chung-Li, Taiwan ( host institution ), Chyi, J.-I ( author ), Lee, C.-M ( author ), Chuo, C.-C ( author ), Cao, X.A ( author ), Dang, G.T ( author ), Zhang, A.P ( author ), Ren, F ( author ), Pearton, S.J ( author ), Chu, S.N.G ( author ), Wilson, R.G ( author ) |
بيانات النشر: | Elsevier Ltd |
سنة النشر: | 2000 |
المجموعة: | University of Florida: Digital Library Center |
الوصف: | Solid State Electronics 44 (2000) 613-617. doi:10.1016/S0038-1101(99)00183-5 ; 2016-03-04T18:46:15Z |
نوع الوثيقة: | text |
وصف الملف: | Pages 613-617 |
اللغة: | English |
Relation: | Solid State Electronics; S0038-1101(99)00183-5; SSE; 2231; http://ufdc.ufl.edu/LS00509510/00001 |
DOI: | 10.1016/S0038-1101(99)00183-5 |
الاتاحة: | https://doi.org/10.1016/S0038-1101(99)00183-5 http://ufdc.ufl.edu/LS00509510/00001 |
Rights: | This item is licensed with the Creative Commons Attribution No Derivatives License. This license allows for redistribution, commercial and non-commercial, as long as it is passed along unchanged and in whole, with credit to the author. © 2000 |
رقم الانضمام: | edsbas.2DFA7F55 |
قاعدة البيانات: | BASE |
DOI: | 10.1016/S0038-1101(99)00183-5 |
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