Academic Journal

Strong ultraviolet photoluminescence from silicon oxide films prepared by magnetron sputtering

التفاصيل البيبلوغرافية
العنوان: Strong ultraviolet photoluminescence from silicon oxide films prepared by magnetron sputtering
المؤلفون: Song, H. Z., Bao, X. M., Li, N. S., Wu, X. L.
المصدر: Applied Physics Letters ; volume 72, issue 3, page 356-358 ; ISSN 0003-6951 1077-3118
بيانات النشر: AIP Publishing
سنة النشر: 1998
الوصف: Intense ultraviolet photoluminescence centered at 370 nm was observed from magnetron-sputtered silicon oxide films after they were annealed at about 1000 °C in N2 atmosphere. This photoluminescence is found to be associated with the formation of nanocrystal silicon particles in the specially structured SiO2, which highly resembles the oxide layer of porous silicon. The luminescence centers at the interface between the nanocrystal silicon particles and the SiO2 matrix are responsible for the strong ultraviolet luminescence.
نوع الوثيقة: article in journal/newspaper
اللغة: English
DOI: 10.1063/1.120735
الاتاحة: http://dx.doi.org/10.1063/1.120735
https://pubs.aip.org/aip/apl/article-pdf/72/3/356/18531735/356_1_online.pdf
رقم الانضمام: edsbas.2C33F53A
قاعدة البيانات: BASE