Academic Journal
GaAs-based near-infrared up-conversion device fabricated by wafer fusion
| العنوان: | GaAs-based near-infrared up-conversion device fabricated by wafer fusion |
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| المؤلفون: | Yang, Y., Liu, H.C., Shen, W.Z., Gupta, J.A., Luo, H., Buchanan, M., Wasilewski, Z.R. |
| سنة النشر: | 2011 |
| المجموعة: | National Research Council Canada: NRC Publications Archive |
| مصطلحات موضوعية: | GaAs/AlGaAs, Near infra red, P-i-n photodetectors, Room temperature, Up-conversion, Wafer fusion, Gallium alloys, Gallium arsenide, Light emitting diodes, Optoelectronic devices, Semiconducting gallium, Infrared devices |
| الوصف: | Reported for the first time is a full GaAs-based room-temperature near-infrared (NIR) up-conversion device fabricated by wafer-fusing a GaNAsSb/GaAs pin photodetector (PD) with a GaAs/AlGaAs light-emitting diode (LED). NIR photons with wavelengths in the range 1.3-1.6m were up-converted to 0.87m. © 2011 The Institution of Engineering and Technology. ; Peer reviewed: Yes ; NRC publication: Yes |
| نوع الوثيقة: | article in journal/newspaper |
| وصف الملف: | text |
| اللغة: | English |
| تدمد: | 0013-5194 |
| Relation: | Electronics Letters, Volume: 47, Issue: 6, Publication date: 2011, Pages: 393–395 |
| DOI: | 10.1049/el.2010.3543 |
| الاتاحة: | https://doi.org/10.1049/el.2010.3543 https://nrc-publications.canada.ca/eng/view/object/?id=d093a160-588e-4229-ba9a-50d1821f5d6a https://nrc-publications.canada.ca/fra/voir/objet/?id=d093a160-588e-4229-ba9a-50d1821f5d6a |
| رقم الانضمام: | edsbas.2BCD6EDB |
| قاعدة البيانات: | BASE |
| تدمد: | 00135194 |
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| DOI: | 10.1049/el.2010.3543 |