التفاصيل البيبلوغرافية
| العنوان: |
High efficiency n-type Si solar cells on Al2O3-passivated boron emitters |
| المؤلفون: |
Benick, J, Hoex, B Bram, Sanden, MCM Richard van de, Kessels, WMM Erwin, Schultz, O, Glunz, SW |
| المصدر: |
ISSN:0003-6951. |
| بيانات النشر: |
American Institute of Physics |
| سنة النشر: |
2008 |
| المجموعة: |
Eindhoven University of Technology (TU/e): Research Portal |
| الوصف: |
In order to utilize the full potential of solar cells fabricated on n-type silicon, it is necessary to achieve an excellent passivation on B-doped emitters. Experimental studies on test structures and theoretical considerations have shown that a negatively charged dielectric layer would be ideally suited for this purpose. Thus, in this work the negative-charge dielectric Al 2O3 was applied as surface passivation layer on high-efficiency n-type silicon solar cells. With this front surface passivation layer, a confirmed conversion efficiency of 23.2% was achieved. For the open-circuit voltage Voc of 703.6 mV, the upper limit for the emitter saturation current density Joc, including the metalized area, has been evaluated to be 29 fA/cm2. This clearly shows that an excellent passivation of highly doped p -type c-Si can be obtained at the device level by applying Al2O3. |
| نوع الوثيقة: |
article in journal/newspaper |
| وصف الملف: |
application/pdf |
| اللغة: |
English |
| Relation: |
http://repository.tue.nl/649892 |
| الاتاحة: |
http://repository.tue.nl/649892 |
| Rights: |
Copyright (c) Benick, J ; Copyright (c) Hoex, B Bram ; Copyright (c) Sanden, MCM Richard van de ; Copyright (c) Kessels, WMM Erwin ; Copyright (c) Schultz, O ; Copyright (c) Glunz, SW |
| رقم الانضمام: |
edsbas.2A2AD76 |
| قاعدة البيانات: |
BASE |