Academic Journal
Dielectric reliability and interface trap characterization in MOCVD grown in situ Al2O3 on β-Ga2O3
| العنوان: | Dielectric reliability and interface trap characterization in MOCVD grown in situ Al2O3 on β-Ga2O3 |
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| المؤلفون: | Roy, Saurav, Bhattacharyya, Arkka, Peterson, Carl, Krishnamoorthy, Sriram |
| المساهمون: | Coherent / II-VI Foundation, Air Force Office of Scientific Research |
| المصدر: | Applied Physics Letters ; volume 126, issue 1 ; ISSN 0003-6951 1077-3118 |
| بيانات النشر: | AIP Publishing |
| سنة النشر: | 2025 |
| الوصف: | In this article, we investigate the in situ growth of Al2O3 on β-Ga2O3 using metal-organic chemical vapor deposition at a high temperature of 800 °C. The Al2O3 is grown within the same reactor as the β-Ga2O3, employing trimethylaluminum and O2 as precursors without breaking the vacuum. We characterize the shallow and deep-level traps through stressed capacitance–voltage (C–V) and photo-assisted C–V methods. The high-temperature deposited dielectric demonstrates an impressive catastrophic breakdown field of approximately 10 MV/cm. Furthermore, we evaluate the reliability and lifetime of the dielectrics using time-dependent dielectric breakdown measurements. By modifying the dielectric deposition process to include a high-temperature (800 °C) thin interfacial layer and a low-temperature (600 °C) bulk layer, we report a 10-year lifetime under a stress field of 3.5 MV/cm along a catastrophic breakdown field of 7.8 MV/cm. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1063/5.0234267 |
| DOI: | 10.1063/5.0234267/20328921/012105_1_5.0234267.pdf |
| الاتاحة: | https://doi.org/10.1063/5.0234267 https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0234267/20328921/012105_1_5.0234267.pdf |
| رقم الانضمام: | edsbas.28FE16B7 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1063/5.0234267 |
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