Academic Journal
Investigation of Strongly Hydrophobic and Thick Porous Silicon Stain Films Properties
العنوان: | Investigation of Strongly Hydrophobic and Thick Porous Silicon Stain Films Properties |
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المؤلفون: | Ayat, Maha, Kechouane, Mohamed, Yaddadene, Chafiaa, Berouaken, Malika, Ayouz, Katia, Boarino, Luca, Gabouze, Noureddine |
المساهمون: | Ayat, Maha, Kechouane, Mohamed, Yaddadene, Chafiaa, Berouaken, Malika, Ayouz, Katia, Boarino, Luca, Gabouze, Noureddine |
سنة النشر: | 2019 |
المجموعة: | INRiM: CINECA IRIS (Istituto Nazionale di Ricerca Metrologica) |
مصطلحات موضوعية: | Porous silicon, Pillars structures, Hydrophobicity, Gas sensing applications |
الوصف: | Porous silicon (PSi) structures with strong hydrophobicity have been achieved by chemical etching of p-type silicon substrates in a solution based on hydrofluoric acid solution (HF) and vanadium oxide (V2O5). The surface morphology and microstructure of the elaborated structured silicon surfaces were investigated using Scanning Electron Microscope (SEM), contact angle and Fourier Transform Infrared spectroscopy (FTIR). The results show that the obtained structures exhibit hierarchically porous surfaces with porous pillars of silicon (PPSi) and an important hydrophobicity of the surface. The electrical properties of those PPSi structures were investigated in presence of 10 ppm of NO2 gas. The response time was about 30s at room temperature. Our results demonstrate that PPSi/Si are highly hydrophobic for long time and suitable for applications in the field of self-cleaning and may be a good candidate in elaborating practical NO2 sensors. |
نوع الوثيقة: | article in journal/newspaper |
اللغة: | English |
Relation: | info:eu-repo/semantics/altIdentifier/wos/WOS:000511687900016; journal:SILICON; http://hdl.handle.net/11696/59889; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85059697828 |
DOI: | 10.1007/s12633-018-0055-2 |
الاتاحة: | http://hdl.handle.net/11696/59889 https://doi.org/10.1007/s12633-018-0055-2 |
رقم الانضمام: | edsbas.289CE195 |
قاعدة البيانات: | BASE |
DOI: | 10.1007/s12633-018-0055-2 |
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