Academic Journal
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation
| العنوان: | New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation |
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| المؤلفون: | Reichmann F., Scalise E., Becker A. P., Hofmann E. V. S., Dabrowski J., Montalenti F., Miglio L., Mulazzi M., Klesse W. M., Capellini G. |
| المساهمون: | Reichmann, F, Scalise, E, Becker, A, Hofmann, E, Dabrowski, J, Montalenti, F, Miglio, L, Mulazzi, M, Klesse, W, Capellini, G |
| بيانات النشر: | Elsevier B.V. NL |
| سنة النشر: | 2022 |
| المجموعة: | Università degli Studi di Milano-Bicocca: BOA (Bicocca Open Archive) |
| مصطلحات موضوعية: | ARPES, DFT, Ge(0 0 1), Germanium, Surface |
| الوصف: | While the Ge(0 0 1) surface has been extensively studied, it is still debated whether it is of conducting or semiconducting nature at room temperature. The evidence collected by angle-resolved photoelectron spectroscopy experiments in the past has led to the preliminary attribution of a semiconducting nature at room temperature. In contrast, we show in this work that the pristine Ge(0 0 1) surface is conducting at room temperature by using temperature-dependent angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and first principles calculations. Specifically, a surface band located ∼200 meV above the valence band maximum has been observed at room temperature. This surface band shows anisotropic dispersions along the [0 1 0] and [1 1 0] directions, but it disappears at lower measurement temperature, which indicates its occupation by thermally excited electrons. State-of-the-art density functional theory calculations undoubtedly attribute this surface band to the unoccupied π*-band formed by dangling bonds on the c(4 × 2) surface reconstruction, while evidencing fundamental differences with the p(2 × 1) reconstruction. Furthermore, the calculations demonstrate that the valence band structure observed in angle-resolved photoelectron spectroscopy experiments arise from projected bulk states and is thus insensitive to surface contamination. Our results contribute to the fundamental knowledge of the Ge(0 0 1) surface and to a better understanding of its role in micro- and opto-electronic devices. |
| نوع الوثيقة: | article in journal/newspaper |
| وصف الملف: | STAMPA |
| اللغة: | English |
| Relation: | info:eu-repo/semantics/altIdentifier/wos/WOS:000712229600007; volume:571; issue:1 January 2022; journal:APPLIED SURFACE SCIENCE; http://hdl.handle.net/10281/330699; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85115420180 |
| DOI: | 10.1016/j.apsusc.2021.151264 |
| الاتاحة: | http://hdl.handle.net/10281/330699 https://doi.org/10.1016/j.apsusc.2021.151264 |
| رقم الانضمام: | edsbas.257DE5DE |
| قاعدة البيانات: | BASE |
| DOI: | 10.1016/j.apsusc.2021.151264 |
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