التفاصيل البيبلوغرافية
| العنوان: |
Passivation of Surface States in GaN by NiO Particles |
| المؤلفون: |
Martin Velazquez-Rizo, Pavel Kirilenko, Daisuke Iida, Zhe Zhuang, Kazuhiro Ohkawa |
| المصدر: |
Crystals; Volume 12; Issue 2; Pages: 211 |
| بيانات النشر: |
Multidisciplinary Digital Publishing Institute |
| سنة النشر: |
2022 |
| المجموعة: |
MDPI Open Access Publishing |
| مصطلحات موضوعية: |
GaN, photocatalysis, surface states, NiO/GaN epitaxy |
| الوصف: |
GaN and NiO/GaN electrodes were characterized by impedance spectroscopy measurements in 0.1 M NaOH. We observed the suppression of the surface states capacitance due to the modification of the chemical state of superficial Ga atoms by NiO. This result suggests that the carriers involved in the photocorrosion of GaN in alkaline conditions originate in its surface states. In addition, we characterized the epitaxial relationship between the NiO particles deposited on GaN by transmission electron microscopy, finding the NiO{111}||GaN{0002} and NiO[220] ||GaN[112¯0] symmetry constraints. |
| نوع الوثيقة: |
text |
| وصف الملف: |
application/pdf |
| اللغة: |
English |
| Relation: |
Materials for Energy Applications; https://dx.doi.org/10.3390/cryst12020211 |
| DOI: |
10.3390/cryst12020211 |
| الاتاحة: |
https://doi.org/10.3390/cryst12020211 |
| Rights: |
https://creativecommons.org/licenses/by/4.0/ |
| رقم الانضمام: |
edsbas.24EFAE71 |
| قاعدة البيانات: |
BASE |