التفاصيل البيبلوغرافية
العنوان: |
Single-mode holey vertical-cavity surface-emitting laser with ultra-narrow beam divergence |
المؤلفون: |
Liu AJ, Chen W, Qu HW, Jiang B, Zhou WJ, Xing MX, Zheng WH, Zheng, WH, Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China. E-mail Address: whzheng@semi.ac.cn |
سنة النشر: |
2010 |
المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
مصطلحات موضوعية: |
Divergence Angle, Graded Index Profile, Low Index Step, Single Mode, Vertical-cavity Surface-emitting Laser, Wave-guide, Power, Vcsels, Index, Depth, 光电子学, waveguide, social dominance, indexes, 波导, behavioral dominance, behavioural dominance, dominance in animals, dominance, social, professional dominance, 功率, 指标, bibliography--indexes, dictionaries, etc, indices, catalogs and indexes, lists of publications, metadata |
الوصف: |
We demonstrated oxide-confined 850-nm vertical-cavity surface-emitting lasers (VCSELs) with a two-dimensional petal-shaped holey structure composed of several annular-sector-shaped holes. Four types of devices with different hole numbers were designed and fabricated. The measured results showed that the larger hole number was beneficial to purifying the lasing mode, and realizing the single-mode operation. The side mode suppression ratio (SMSR) exceeded 30 dB throughout the entire drive current. Mode selective loss mechanism was used to explain the single-mode characteristic. The single-mode devices possessed good beam profiles, and the lowest divergence angle was as narrow as 3.2 degrees (full width at half maximum), attributed to the graded index profile and the shallow etching in the top distributed Bragg reflector (DBR). |
نوع الوثيقة: |
report |
اللغة: |
Chinese |
Relation: |
LASER PHYSICS LETTERS; Liu AJ,Chen W,Qu HW,Jiang B,Zhou WJ,Xing MX,Zheng WH.Single-mode holey vertical-cavity surface-emitting laser with ultra-narrow beam divergence.LASER PHYSICS LETTERS,2010,7(3):213-217; http://ir.semi.ac.cn/handle/172111/11191 |
الاتاحة: |
http://ir.semi.ac.cn/handle/172111/11191 |
رقم الانضمام: |
edsbas.245BAE35 |
قاعدة البيانات: |
BASE |