Trap identification on n-channel GAA NW FETs

التفاصيل البيبلوغرافية
العنوان: Trap identification on n-channel GAA NW FETs
المؤلفون: Bordin, A., Cretu, B., Carin, R., Simoen, Eddy, Hellings, G., Linten, D., Claeys, C.
المصدر: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Proceedings ; ISSN: 2330-5738 ; ISSN: 2472-9132 ; ISBN: 9781728187662 ; ISBN: 9781728187655
سنة النشر: 2020
المجموعة: Ghent University Academic Bibliography
مصطلحات موضوعية: Physics and Astronomy, GAA NW FET, low frequency noise, generation-recombination noise, low frequency noise spectroscopy
الوصف: In this work, low frequency noise spectroscopy is performed on n-channel gate all around (GAA) nanowire (NW) FETs. The study of generation-recombination noise at fixed temperature as a function of the applied bias suggests the existence of traps located in the depleted Si film. The temperature evolution of the generation-recombination noise at fixed polarization allows constructing an Arrhenius diagram from which a hydrogen related trap was identified. Moreover, it is suggested that it is more suitable to use the surface trap density as a figure of merit.
نوع الوثيقة: conference object
وصف الملف: application/pdf
اللغة: English
ردمك: 978-1-72818-766-2
978-1-72818-765-5
1-72818-766-4
1-72818-765-6
Relation: https://biblio.ugent.be/publication/8708507; http://hdl.handle.net/1854/LU-8708507; http://dx.doi.org/10.1109/eurosoi-ulis49407.2020.9365281; https://biblio.ugent.be/publication/8708507/file/8708509
DOI: 10.1109/eurosoi-ulis49407.2020.9365281
الاتاحة: https://biblio.ugent.be/publication/8708507
http://hdl.handle.net/1854/LU-8708507
https://doi.org/10.1109/eurosoi-ulis49407.2020.9365281
https://biblio.ugent.be/publication/8708507/file/8708509
Rights: No license (in copyright) ; info:eu-repo/semantics/restrictedAccess
رقم الانضمام: edsbas.23975158
قاعدة البيانات: BASE
الوصف
ردمك:9781728187662
9781728187655
1728187664
1728187656
DOI:10.1109/eurosoi-ulis49407.2020.9365281