Academic Journal

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

التفاصيل البيبلوغرافية
العنوان: Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor
المؤلفون: Uyar, R. Ertugrul, Acar, F. Z., Tataroglu, ADEM
سنة النشر: 2023
الوصف: Dielectric, conductivity and modulus properties of MOS capacitor with zinc oxide (ZnO) interlayer produced via RF magnetron sputtering were investigated by using admittance spectroscopy measurements. Frequency and temperature dependence of the complex dielectric permittivity (epsilon* = epsilon '-i epsilon ''), dielectric loss factor (tan delta), ac conductivity (sigma (ac)) and complex electric modulus (M*=M"+iM') were studied in temperature interval of 100-400 K for two frequencies (100 kHz and 500 kHz). While the dielectric constant (epsilon ') and loss (epsilon ') value increase as the temperature rises, their values decrease as the frequency rises. The increase in epsilon ' and epsilon ' is explained by thermal activation of charge carriers. Also, the sigma (ac) value increases both frequency and temperature increase. The thermal activation energy (E-a) were determined from slope of Arrhenius plot.
نوع الوثيقة: article in journal/newspaper
اللغة: English
Relation: 7aec8123-bc28-4bb0-8a09-1ac52c489182; https://avesis.gazi.edu.tr/publication/details/7aec8123-bc28-4bb0-8a09-1ac52c489182/oai
DOI: 10.1149/2162-8777/acc3c0
الاتاحة: https://doi.org/10.1149/2162-8777/acc3c0
https://avesis.gazi.edu.tr/publication/details/7aec8123-bc28-4bb0-8a09-1ac52c489182/oai
Rights: info:eu-repo/semantics/closedAccess
رقم الانضمام: edsbas.237C908D
قاعدة البيانات: BASE
الوصف
DOI:10.1149/2162-8777/acc3c0