Conference
Performance and Design Considerations for Gate-All-Around Stacked-NanoWires FETs
| العنوان: | Performance and Design Considerations for Gate-All-Around Stacked-NanoWires FETs |
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| المؤلفون: | Barraud, S., Lapras, V., Previtali, B., Samson, M., Lacord, J., Martinie, S., Jaud, M.-A, Athanasiou, S, Triozon, F., Rozeau, O., Hartmann, J, M, Vizioz, C, Comboroure, C, Andrieu, F, Barbé, J, C, Vinet, M, Ernst, T |
| المساهمون: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics Crolles (ST-CROLLES), ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010), European Project: 688101,H2020,H2020-ICT-2015,SUPERAID7(2016) |
| المصدر: | 2017 IEEE International Electron Devices Meeting (IEDM) https://cea.hal.science/cea-01973409 2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268473⟩ |
| بيانات النشر: | HAL CCSD |
| سنة النشر: | 2017 |
| المجموعة: | HAL-CEA (Commissariat à l'énergie atomique et aux énergies alternatives) |
| مصطلحات موضوعية: | [SPI]Engineering Sciences [physics] |
| جغرافية الموضوع: | San Francisco, United States |
| الوصف: | International audience ; This paper presents recent progress on Gate-All-Around (GAA) stacked-NanoWire (NW) / NanoSheet (NS) MOSFETs. Key technological challenges will be discussed and recent research results presented. Width-dependent carrier mobility in Si NW/NS and FinFET will be analyzed, and intrinsic performance and design considerations of GAA structures will be discussed and compared to FinFET devices with a focus on electrostatics, parasitic capacitances and different layout options. The results show that more flexibility can be achieved with stacked-NS transistors in order to manage power-performance optimization. |
| نوع الوثيقة: | conference object |
| اللغة: | English |
| Relation: | info:eu-repo/grantAgreement//688101/EU/Stability Under Process Variability for Advanced Interconnects and Devices Beyond 7 nm node/SUPERAID7; cea-01973409; https://cea.hal.science/cea-01973409; https://cea.hal.science/cea-01973409/document; https://cea.hal.science/cea-01973409/file/6-Barraud_IEDM2017.pdf |
| DOI: | 10.1109/IEDM.2017.8268473 |
| الاتاحة: | https://cea.hal.science/cea-01973409 https://cea.hal.science/cea-01973409/document https://cea.hal.science/cea-01973409/file/6-Barraud_IEDM2017.pdf https://doi.org/10.1109/IEDM.2017.8268473 |
| Rights: | info:eu-repo/semantics/OpenAccess |
| رقم الانضمام: | edsbas.23078B58 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/IEDM.2017.8268473 |
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