التفاصيل البيبلوغرافية
| العنوان: |
Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications |
| المؤلفون: |
Kollmuß M., Köhler J., Ou H., Fan W., Chaussende D., Hock R., Wellmann P. J. |
| بيانات النشر: |
Zenodo |
| سنة النشر: |
2022 |
| المجموعة: |
Zenodo |
| الوصف: |
3C-SiC films have been grown on [100] n-doped Si substrates in a horizontal cold wall CVD reactor. Without the use of plasma enhancement, the precursors silane and propane are used to deposit silicon carbide films at T < 1200°C. The structure of the grown films has been investigated via FESEM, XRD and Raman spectroscopy. It has been found that the growth rates are between 200 and 300 nm/h. Additionally, structural analysis give evidence of polycrystalline phases. Reasons for that could be insufficient cracking of the precursors and homogenous nucleation of Si species in the gas phase. |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
unknown |
| Relation: |
https://zenodo.org/communities/eu; https://zenodo.org/communities/sicomb; oai:zenodo.org:7640589 |
| DOI: |
10.4028/p-nshb40 |
| الاتاحة: |
https://doi.org/10.4028/p-nshb40 |
| Rights: |
info:eu-repo/semantics/openAccess ; Creative Commons Attribution 4.0 International ; https://creativecommons.org/licenses/by/4.0/legalcode |
| رقم الانضمام: |
edsbas.21048B01 |
| قاعدة البيانات: |
BASE |