Conference
On the universality of drain-induced-barrier-lowering in field-effect transistors
| العنوان: | On the universality of drain-induced-barrier-lowering in field-effect transistors |
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| المؤلفون: | Choi, Su-Min, Jo, Hyeon-Bhin, Yun, Do-Young, Kim, Jun-Gyu, Park, Wan-Soo, Baek, Ji-Min, Lee, In-Geun, Shin, Jang-Kyoo, Kwon, Hyuk-Min, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Lee, Jae-Hak, Kim, Dae-Hyun |
| المساهمون: | Samsung |
| المصدر: | 2022 International Electron Devices Meeting (IEDM) |
| بيانات النشر: | IEEE |
| سنة النشر: | 2022 |
| نوع الوثيقة: | conference object |
| اللغة: | unknown |
| DOI: | 10.1109/iedm45625.2022.10019358 |
| الاتاحة: | http://dx.doi.org/10.1109/iedm45625.2022.10019358 http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019358.pdf?arnumber=10019358 |
| Rights: | https://doi.org/10.15223/policy-029 ; https://doi.org/10.15223/policy-037 |
| رقم الانضمام: | edsbas.1DFFC7EF |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/iedm45625.2022.10019358 |
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