Academic Journal
Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN
| العنوان: | Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN |
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| المؤلفون: | Saha, Bivas, Garbrecht, Magnus, Pérez Taborda, Jaime Andrés, Fawey, Mohammed H., Koh, Yee Rui, Shakouri, Ali, Martín-González, Marisol, Hultman, Lars, Sands, Timothy |
| المساهمون: | National Science Foundation (US), Swedish Foundation for International Cooperation in Research and Higher Education, Swedish Research Council, Linköping University, European Research Council, Consejo Superior de Investigaciones Científicas (España), Ministerio de Economía y Competitividad (España), Garbrecht, Magnus, Pérez Taborda, Jaime Andrés, Fawey, Mohammed H., Hultman, Lars |
| بيانات النشر: | American Institute of Physics |
| سنة النشر: | 2017 |
| المجموعة: | Digital.CSIC (Consejo Superior de Investigaciones Científicas / Spanish National Research Council) |
| الوصف: | Scandium nitride (ScN) is an emerging indirect bandgap rocksalt semiconductor that has attracted significant attention in recent years for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices and as a substrate material for high quality GaN growth. Due to the presence of oxygen impurities and native defects such as nitrogen vacancies, sputter-deposited ScN thin-films are highly degenerate n-type semiconductors with carrier concentrations in the (1–6) × 1020 cm−3 range. In this letter, we show that magnesium nitride (MgxNy) acts as an efficient hole dopant in ScN and reduces the n-type carrier concentration, turning ScN into a p-type semiconductor at high doping levels. Employing a combination of high-resolution X-ray diffraction, transmission electron microscopy, and room temperature optical and temperature dependent electrical measurements, we demonstrate that p-type Sc1-xMgxN thin-film alloys (a) are substitutional solid solutions without MgxNy precipitation, phase segregation, or secondary phase formation within the studied compositional region, (b) exhibit a maximum hole-concentration of 2.2 × 1020 cm−3 and a hole mobility of 21 cm2/Vs, (c) do not show any defect states inside the direct gap of ScN, thus retaining their basic electronic structure, and (d) exhibit alloy scattering dominating hole conduction at high temperatures. These results demonstrate MgxNy doped p-type ScN and compare well with our previous reports on p-type ScN with manganese nitride (MnxNy) doping. ; B.S. and T.D.S. acknowledge financial support by the National Science Foundation and U.S. Department of Energy (Grant No. CBET-1048616). M.G. and B.S. acknowledge support from The Swedish Foundation for International Cooperation in Research and Higher Education (STINT). The Knut and Alice Wallenberg (KAW) Foundation is acknowledged for the Electron Microscope Laboratory in Linko¨ping. M.G. and L.H. acknowledge financial support from the Swedish ... |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| تدمد: | 0003-6951 1077-3118 |
| Relation: | #PLACEHOLDER_PARENT_METADATA_VALUE#; info:eu-repo/grantAgreement/EC/H2020/665634; Publisher's version; https://doi.org/10.1063/1.4989530; Sí; Applied Physics Letters 110(25): 252104 (2017); http://hdl.handle.net/10261/181146; http://dx.doi.org/10.13039/501100000781; http://dx.doi.org/10.13039/501100003329; http://dx.doi.org/10.13039/501100003339; http://dx.doi.org/10.13039/501100003945; http://dx.doi.org/10.13039/501100001728; http://dx.doi.org/10.13039/100000001 |
| DOI: | 10.1063/1.4989530 |
| DOI: | 10.13039/501100000781 |
| DOI: | 10.13039/501100003329 |
| DOI: | 10.13039/501100003339 |
| DOI: | 10.13039/501100003945 |
| DOI: | 10.13039/501100001728 |
| DOI: | 10.13039/100000001 |
| الاتاحة: | http://hdl.handle.net/10261/181146 https://doi.org/10.1063/1.4989530 https://doi.org/10.13039/501100000781 https://doi.org/10.13039/501100003329 https://doi.org/10.13039/501100003339 https://doi.org/10.13039/501100003945 https://doi.org/10.13039/501100001728 https://doi.org/10.13039/100000001 |
| Rights: | open |
| رقم الانضمام: | edsbas.1C2549D9 |
| قاعدة البيانات: | BASE |
| تدمد: | 00036951 10773118 |
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| DOI: | 10.1063/1.4989530 |