Green emission in carbon doped ZnO films

التفاصيل البيبلوغرافية
العنوان:	Green emission in carbon doped ZnO films
المؤلفون:	Tseng, L. T., Yi, J. B., Zhang, X. Y., Xing, G. Z., Fan, H. M., Herng, T. S., Luo, X., Ionescu, M., Ding, J., Li, S.
المساهمون:	Australian Research Council
المصدر:	AIP Advances ; volume 4, issue 6 ; ISSN 2158-3226
بيانات النشر:	AIP Publishing
سنة النشر:	2014
الوصف:	The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60–100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement.
نوع الوثيقة:	article in journal/newspaper
اللغة:	English
DOI:	10.1063/1.4882172
DOI:	10.1063/1.4882172/12946971/067117_1_online.pdf
الاتاحة:	http://dx.doi.org/10.1063/1.4882172 https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/1.4882172/12946971/067117_1_online.pdf
رقم الانضمام:	edsbas.194A5594
قاعدة البيانات:	BASE

الوصف
DOI:	10.1063/1.4882172