التفاصيل البيبلوغرافية
العنوان: |
Microwave Dielectric Materials with Defect-Dipole Clusters Induced Colossal Permittivity and Ultra-low Loss |
المؤلفون: |
Jianmei Liu (4632793), Lilit Jacob (3998357), Julien Langley (8921957), Zhenxiao Fu (3901447), Xiuhua Cao (10766405), Shiwo Ta (11649299), Hua Chen (43790), Ŝaru̅nas Svirskas (11649302), Ju̅ras Banys (1451851), Xiaoyong Wei (820465), Nicholas Cox (1498486), Terry J. Frankcombe (1417471), Yun Liu (84346) |
سنة النشر: |
2021 |
المجموعة: |
Smithsonian Institution: Digital Repository |
مصطلحات موضوعية: |
Biotechnology, Developmental Biology, Cancer, Inorganic Chemistry, Plant Biology, Space Science, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, work presents insights, offer many potentials, microwave dielectric properties, microwave dielectric materials, microwave dielectric material, microwave dielectric devices, low dielectric loss, independent colossal permittivity, great interest due, systemic defect analysis, negatively charged la, future communication technology, developing various applications, 4 × 10, f sub, communication technology, q <, ∼ 2500, quality factor, generally less, forming defect, doped basno |
الوصف: |
Microwave dielectric materials are of great interest due to their applications in communication technology. The intrinsically low dielectric permittivity (generally less than 100) of traditional microwave dielectric materials has limited their capability in reducing the device size and developing various applications. In this paper, we report a microwave dielectric material, (La + Nb) co-doped BaSnO 3 , which exhibits both frequency- and temperature-independent colossal permittivity (ε > 10 3 ) over the frequency range from 10 Hz to microwave region (∼1 GHz) while retaining the ultra-low dielectric loss of 4 × 10 –4 , equivalent to a quality factor Q f (GHz) ∼2500. Systemic defect analysis and density functional theory calculations suggest that negatively charged La and positively charged Nb octahedra are correlated adjacent to each other along the [110] direction, forming defect-dipole clusters, which lead to their microwave dielectric properties. This work presents insights on the development of microwave dielectric materials that offer many potentials for microwave dielectric devices and their associated applications in future communication technology. |
نوع الوثيقة: |
article in journal/newspaper |
اللغة: |
unknown |
Relation: |
https://figshare.com/articles/journal_contribution/Microwave_Dielectric_Materials_with_Defect-Dipole_Clusters_Induced_Colossal_Permittivity_and_Ultra-low_Loss/16934096 |
DOI: |
10.1021/acsaelm.1c00236.s001 |
الاتاحة: |
https://doi.org/10.1021/acsaelm.1c00236.s001 |
Rights: |
CC BY-NC 4.0 |
رقم الانضمام: |
edsbas.18AC154F |
قاعدة البيانات: |
BASE |