Academic Journal
Properties of zirconium silicate thin films prepared by lase ablation
العنوان: | Properties of zirconium silicate thin films prepared by lase ablation |
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المؤلفون: | FILIPESCU, N. SCARISOREANU, D. G. MATEI, G. DINESCU, O. TOMA, C. GHICA, L. C. NISTOR, M. DINESCU, FERRARI, Aldo, BALUCANI, Marco |
المساهمون: | Filipescu, N., Scarisoreanu, D. G., Matei, G., Dinescu, Ferrari, Aldo, Balucani, Marco, O., Toma, C., Ghica, L. C., Nistor, M., Dinescu |
سنة النشر: | 2004 |
المجموعة: | Sapienza Università di Roma: CINECA IRIS |
الوصف: | Thin films of zirconium silicate were obtained by alternative ablation of Zr and Si targets in oxygen reactive atmosphere; in a set of experiments a radiofrequency (RF) discharge beam was added to the pulsed laser deposition (PLD) system. Pt-coated silicon, Sapphire and glass were used as collectors. The third harmonics of the Nd:YAG laser (λ = 355 nm) working at 10 Hz and at a laser fluence varying in the range of (4-6 J/cm 2) was used. The oxygen pressure varied between 1 and 10 Pa and the substrate holder was kept at room temperature. The RF beam addition influence on the electrical, optical and morphological proprieties of zirconium silicate films was particularly investigated. The obtained films, with thicknesses in the range of 15-60nm, have been characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD) and electrical measurements. Dielectric permittivity values (real part) in the range of 7-13 and low losses (0.008-0.015) were measured for samples prepared with the RF oxygen beam addition. |
نوع الوثيقة: | article in journal/newspaper |
وصف الملف: | STAMPA |
اللغة: | English |
Relation: | info:eu-repo/semantics/altIdentifier/wos/WOS:000225855200009; volume:7; firstpage:209; lastpage:214; numberofpages:6; journal:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING; http://hdl.handle.net/11573/240579; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-9544245843; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=000225855200009&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=0c7ff228ccbaaa74236f48834a34396a; http://www.scopus.com/inward/record.url?eid=2-s2.0-9544245843&partnerID=65&md5=2a000755dcad25a15666b0492eb4940e |
DOI: | 10.1016/j.mssp.2004.09.122 |
الاتاحة: | http://hdl.handle.net/11573/240579 https://doi.org/10.1016/j.mssp.2004.09.122 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=000225855200009&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=0c7ff228ccbaaa74236f48834a34396a http://www.scopus.com/inward/record.url?eid=2-s2.0-9544245843&partnerID=65&md5=2a000755dcad25a15666b0492eb4940e |
رقم الانضمام: | edsbas.1714CF4C |
قاعدة البيانات: | BASE |
DOI: | 10.1016/j.mssp.2004.09.122 |
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