Academic Journal

Properties of zirconium silicate thin films prepared by lase ablation

التفاصيل البيبلوغرافية
العنوان: Properties of zirconium silicate thin films prepared by lase ablation
المؤلفون: FILIPESCU, N. SCARISOREANU, D. G. MATEI, G. DINESCU, O. TOMA, C. GHICA, L. C. NISTOR, M. DINESCU, FERRARI, Aldo, BALUCANI, Marco
المساهمون: Filipescu, N., Scarisoreanu, D. G., Matei, G., Dinescu, Ferrari, Aldo, Balucani, Marco, O., Toma, C., Ghica, L. C., Nistor, M., Dinescu
سنة النشر: 2004
المجموعة: Sapienza Università di Roma: CINECA IRIS
الوصف: Thin films of zirconium silicate were obtained by alternative ablation of Zr and Si targets in oxygen reactive atmosphere; in a set of experiments a radiofrequency (RF) discharge beam was added to the pulsed laser deposition (PLD) system. Pt-coated silicon, Sapphire and glass were used as collectors. The third harmonics of the Nd:YAG laser (λ = 355 nm) working at 10 Hz and at a laser fluence varying in the range of (4-6 J/cm 2) was used. The oxygen pressure varied between 1 and 10 Pa and the substrate holder was kept at room temperature. The RF beam addition influence on the electrical, optical and morphological proprieties of zirconium silicate films was particularly investigated. The obtained films, with thicknesses in the range of 15-60nm, have been characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD) and electrical measurements. Dielectric permittivity values (real part) in the range of 7-13 and low losses (0.008-0.015) were measured for samples prepared with the RF oxygen beam addition.
نوع الوثيقة: article in journal/newspaper
وصف الملف: STAMPA
اللغة: English
Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000225855200009; volume:7; firstpage:209; lastpage:214; numberofpages:6; journal:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING; http://hdl.handle.net/11573/240579; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-9544245843; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=000225855200009&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=0c7ff228ccbaaa74236f48834a34396a; http://www.scopus.com/inward/record.url?eid=2-s2.0-9544245843&partnerID=65&md5=2a000755dcad25a15666b0492eb4940e
DOI: 10.1016/j.mssp.2004.09.122
الاتاحة: http://hdl.handle.net/11573/240579
https://doi.org/10.1016/j.mssp.2004.09.122
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=000225855200009&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=0c7ff228ccbaaa74236f48834a34396a
http://www.scopus.com/inward/record.url?eid=2-s2.0-9544245843&partnerID=65&md5=2a000755dcad25a15666b0492eb4940e
رقم الانضمام: edsbas.1714CF4C
قاعدة البيانات: BASE
الوصف
DOI:10.1016/j.mssp.2004.09.122