Academic Journal

Defect-related energy structures of AlN nanotips probed by photoluminescence

التفاصيل البيبلوغرافية
العنوان: Defect-related energy structures of AlN nanotips probed by photoluminescence
المؤلفون: Chen, Haitao, Chen, Guoshuai, Zhou, Xuming, Zhu, Wenming, Chen, Xiaobing, Zeng, Xianghua
المصدر: Journal of Physics D: Applied Physics ; volume 44, issue 50, page 505304 ; ISSN 0022-3727 1361-6463
بيانات النشر: IOP Publishing
سنة النشر: 2011
الوصف: Large-scale AlN nanotip arrays were fabricated via a facile catalysis-free approach using AlCl 3 powder and NH 3 as starting materials. These nanotips exhibit two intense broad emissions centred at about 375 and 480 nm. Both bands do not change significantly or freeze out at a low temperature, showing the features of photoionization of deep donor electrons. Photoluminescence and photoluminescence excitation spectral examination as well as the possible mechanism involved are systematically investigated. It reveals that the two bands are connected with the electronic states determined by the nitrogen vacancy and complex defects. The related energy structures are also provided. This work provides a possible mechanism for defect-related emissions in various AlN nanostructures.
نوع الوثيقة: article in journal/newspaper
اللغة: unknown
DOI: 10.1088/0022-3727/44/50/505304
DOI: 10.1088/0022-3727/44/50/505304/pdf
الاتاحة: http://dx.doi.org/10.1088/0022-3727/44/50/505304
https://iopscience.iop.org/article/10.1088/0022-3727/44/50/505304
https://iopscience.iop.org/article/10.1088/0022-3727/44/50/505304/pdf
Rights: https://iopscience.iop.org/page/copyright ; https://iopscience.iop.org/info/page/text-and-data-mining
رقم الانضمام: edsbas.16DDE7B7
قاعدة البيانات: BASE
الوصف
DOI:10.1088/0022-3727/44/50/505304