Academic Journal
Defect-related energy structures of AlN nanotips probed by photoluminescence
العنوان: | Defect-related energy structures of AlN nanotips probed by photoluminescence |
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المؤلفون: | Chen, Haitao, Chen, Guoshuai, Zhou, Xuming, Zhu, Wenming, Chen, Xiaobing, Zeng, Xianghua |
المصدر: | Journal of Physics D: Applied Physics ; volume 44, issue 50, page 505304 ; ISSN 0022-3727 1361-6463 |
بيانات النشر: | IOP Publishing |
سنة النشر: | 2011 |
الوصف: | Large-scale AlN nanotip arrays were fabricated via a facile catalysis-free approach using AlCl 3 powder and NH 3 as starting materials. These nanotips exhibit two intense broad emissions centred at about 375 and 480 nm. Both bands do not change significantly or freeze out at a low temperature, showing the features of photoionization of deep donor electrons. Photoluminescence and photoluminescence excitation spectral examination as well as the possible mechanism involved are systematically investigated. It reveals that the two bands are connected with the electronic states determined by the nitrogen vacancy and complex defects. The related energy structures are also provided. This work provides a possible mechanism for defect-related emissions in various AlN nanostructures. |
نوع الوثيقة: | article in journal/newspaper |
اللغة: | unknown |
DOI: | 10.1088/0022-3727/44/50/505304 |
DOI: | 10.1088/0022-3727/44/50/505304/pdf |
الاتاحة: | http://dx.doi.org/10.1088/0022-3727/44/50/505304 https://iopscience.iop.org/article/10.1088/0022-3727/44/50/505304 https://iopscience.iop.org/article/10.1088/0022-3727/44/50/505304/pdf |
Rights: | https://iopscience.iop.org/page/copyright ; https://iopscience.iop.org/info/page/text-and-data-mining |
رقم الانضمام: | edsbas.16DDE7B7 |
قاعدة البيانات: | BASE |
DOI: | 10.1088/0022-3727/44/50/505304 |
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