Academic Journal
Optical Properties of InGaAsN/GaAs Quantum Well and Quantum Dot Structures for Longwavelength Emission
| العنوان: | Optical Properties of InGaAsN/GaAs Quantum Well and Quantum Dot Structures for Longwavelength Emission |
|---|---|
| المؤلفون: | Volovik, B. V., Kovsh, A. R., Passenberg, W., Kuenzel, H., Musikhin, Yu. G. |
| المساهمون: | RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST |
| المصدر: | DTIC |
| سنة النشر: | 2000 |
| المجموعة: | Defense Technical Information Center: DTIC Technical Reports database |
| مصطلحات موضوعية: | Solid State Physics, QUANTUM DOTS, FIBER OPTICS, OPTICAL PROPERTIES, GALLIUM ARSENIDES, NITROGEN, HETEROGENEITY, RUSSIA, DOPING, INDIUM, QUANTUM WELL LASERS, COMPONENT REPORT, FOREIGN REPORTS |
| الوصف: | This report investigated the optical properties of heterostructures with InGaAsN/ GaAs QW-like and QD-like insertions. GaAsN and InGaAsN layers with relatively high nitrogen content (more than 1%) were grown. The long wavelength emission tip to 1.32 microns at room temperate was realized. TEM and optical studies confirm formation of quantum dots for the case of higher indium concentrations. ; Pres: 8th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia. 19-23 Jun 2000. p148-151. This article is from ADA407315 Nanostructures: Physics and Technology International Symposium (8th) Held in St. Petersburg, Russia on June 19-23, 2000 Proceedings |
| نوع الوثيقة: | text |
| وصف الملف: | text/html |
| اللغة: | English |
| Relation: | http://www.dtic.mil/docs/citations/ADP013041 |
| الاتاحة: | http://www.dtic.mil/docs/citations/ADP013041 http://oai.dtic.mil/oai/oai?&verb=getRecord&metadataPrefix=html&identifier=ADP013041 |
| Rights: | Availability: Hard copy only. |
| رقم الانضمام: | edsbas.15BA57E5 |
| قاعدة البيانات: | BASE |
| الوصف غير متاح. |