Academic Journal

An Optically Tunable THz Modulator Based on Nanostructures of Silicon Substrates

التفاصيل البيبلوغرافية
العنوان: An Optically Tunable THz Modulator Based on Nanostructures of Silicon Substrates
المؤلفون: Chen Mo, Jing-Bo Liu, Dong-Shan Wei, Hong-Lei Wu, Qi-Ye Wen, Dong-Xiong Ling
المصدر: Sensors, Vol 20, Iss 2198, p 2198 (2020)
بيانات النشر: MDPI AG
سنة النشر: 2020
المجموعة: Directory of Open Access Journals: DOAJ Articles
مصطلحات موضوعية: terahertz, modulator, nanostructure, CST simulation, Chemical technology, TP1-1185
الوصف: Nanostructures can induce light multireflection, enabling strong light absorption and efficient photocarrier generation. In this work, silicon nanostructures, including nanocylinders, nanotips, and nanoholes, were proposed as all-optical broadband THz modulators. The modulation properties of these modulators were simulated and compared with finite element method calculations. It is interesting to note that the light reflectance values from all nanostructure were greatly suppressed, showing values of 26.22%, 21.04%, and 0.63% for nanocylinder, nanohole, and nanotip structures, respectively, at 2 THz. The calculated results show that under 808 nm illumination light, the best modulation performance is achieved in the nanotip modulator, which displays a modulation depth of 91.63% with a pumping power of 60 mW/mm 2 at 2 THz. However, under shorter illumination wavelengths, such as 532 nm, the modulation performance for all modulators deteriorates and the best performance is found with the nanohole-based modulator rather than the nanotip-based one. To further clarify the effects of the nanostructure and wavelength on the THz modulation, a graded index layer model was established and the simulation results were explained. This work may provide a further theoretical guide for the design of optically tunable broadband THz modulators.
نوع الوثيقة: article in journal/newspaper
اللغة: English
تدمد: 1424-8220
Relation: https://www.mdpi.com/1424-8220/20/8/2198; https://doaj.org/toc/1424-8220; https://doaj.org/article/01fdff840588464d9fbfbf89d305902f
DOI: 10.3390/s20082198
الاتاحة: https://doi.org/10.3390/s20082198
https://doaj.org/article/01fdff840588464d9fbfbf89d305902f
رقم الانضمام: edsbas.114F6C33
قاعدة البيانات: BASE
الوصف
تدمد:14248220
DOI:10.3390/s20082198