Conference
Tuning InAs/InP(001) quantum dot emission from 1.55 to 2 μm by varying cap-layer growth rate in metalorganic vapor phase epitaxy
| العنوان: | Tuning InAs/InP(001) quantum dot emission from 1.55 to 2 μm by varying cap-layer growth rate in metalorganic vapor phase epitaxy |
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| المؤلفون: | Michon, A., Hostein, R., Patriarche, G., Beaudoin, G., Gogneau, N., Beveratos, A., Robert-Philip, I., Sagnes, I., Laurent, S., Sauvage, S., Boucaud, P. |
| المصدر: | 2008 20th International Conference on Indium Phosphide and Related Materials ; volume 44, page 1-4 |
| بيانات النشر: | IEEE |
| سنة النشر: | 2008 |
| نوع الوثيقة: | conference object |
| اللغة: | unknown |
| DOI: | 10.1109/iciprm.2008.4702909 |
| الاتاحة: | http://dx.doi.org/10.1109/iciprm.2008.4702909 http://xplorestaging.ieee.org/ielx5/4694766/4702892/04702909.pdf?arnumber=4702909 |
| رقم الانضمام: | edsbas.1042164A |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/iciprm.2008.4702909 |
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