Academic Journal
Modeling of Composition and Channel Length-Dependent Transient Characteristics in Short-Channel IGZO Field-Effect Transistors
| العنوان: | Modeling of Composition and Channel Length-Dependent Transient Characteristics in Short-Channel IGZO Field-Effect Transistors |
|---|---|
| المؤلفون: | Kim, Donguk, Lee, Dayeon, Kim, Wonjung, Lee, Ho Jung, Kim, Changwook, Lee, Kwang-Hee, Jung, Moonil, Yang, Jee-Eun, Jang, Younjin, Kim, Sungjun, Kim, Sangwook, Kim, Dae Hwan |
| المساهمون: | Samsung Advanced Institute of Technology, Kookmin University, Korea Semiconductor Research Consortium, National Research Foundation of Korea, Ministry of Trade, Industry and Energy, Institute for Information and Communications Technology Promotion |
| المصدر: | ACS Applied Materials & Interfaces ; ISSN 1944-8244 1944-8252 |
| بيانات النشر: | American Chemical Society (ACS) |
| سنة النشر: | 2025 |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1021/acsami.4c17007 |
| الاتاحة: | https://doi.org/10.1021/acsami.4c17007 https://pubs.acs.org/doi/pdf/10.1021/acsami.4c17007 |
| Rights: | https://doi.org/10.15223/policy-029 ; https://doi.org/10.15223/policy-037 ; https://doi.org/10.15223/policy-045 |
| رقم الانضمام: | edsbas.100457BE |
| قاعدة البيانات: | BASE |
| DOI: | 10.1021/acsami.4c17007 |
|---|