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Magnetic-Transition-Induced Colossal Magnetoresistance in the Ferrimagnetic Semiconductor Mn$_3$Si$_2$Te$_6$
| العنوان: | Magnetic-Transition-Induced Colossal Magnetoresistance in the Ferrimagnetic Semiconductor Mn$_3$Si$_2$Te$_6$ |
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| المؤلفون: | Zhang, Yiyue, Li, ZeYu, Yang, Kunya, Wei, Linlin, Mi, Xinrun, Wang, Aifeng, Zhou, Xiaoyuan, Yang, Xiaolong, Chai, Yisheng, He, Mingquan |
| سنة النشر: | 2024 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science, Condensed Matter - Strongly Correlated Electrons |
| الوصف: | In the ferrimagnetic semiconductor Mn$_3$Si$_2$Te$_6$, a colossal magnetoresistance (CMR) is observed only when a magnetic field is applied along the magnetic hard axis ($\mathbf{H}\parallel c$). This phenomenon suggests an unconventional CMR mechanism potentially driven by the interplay between magnetism, topological band structure, and/or chiral orbital currents (COC). By comparing electrical resistance measurements using continuous direct currents and pulse currents, we found that the current-induced insulator-metal transition, supporting the COC-driven CMR mechanism, is likely a consequence of Joule heating effects. Additionally, multiple magnetic field-induced metamagnetic transitions were identified through AC magnetostriction coefficient experiments, but only when $\mathbf{H}\parallel c$. Importantly, the transition at $\sim$ 5 T marks the boundary between the low-field CMR and high-field weak MR. These findings suggest that field-induced metamagnetic transition combined with partial polarization of magnetic moments are the primary causes of the band gap closure, leading to the observed CMR in Mn$_3$Si$_2$Te$_6$. Comment: 5 pages, 4 figures |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2412.01518 |
| رقم الانضمام: | edsarx.2412.01518 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |