Report
Heterogeneous integration of amorphous silicon carbide on thin film lithium niobate
| العنوان: | Heterogeneous integration of amorphous silicon carbide on thin film lithium niobate |
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| المؤلفون: | Li, Zizheng, Sharma, Naresh, Lopez-Rodriguez, Bruno, van der Kolk, Roald, Scholte, Thomas, Voncken, Hugo, van der Boom, Jasper, Gröblacher, Simon, Zadeh, Iman Esmaeil |
| سنة النشر: | 2024 |
| المجموعة: | Physics (Other) |
| مصطلحات موضوعية: | Physics - Optics, Physics - Applied Physics |
| الوصف: | In the past decade, lithium niobate (LiNbO3 or LN) photonics, thanks to its heat-free and fast electro-optical modulation, second-order non-linearities and low loss, has been extensively investigated. Despite numerous demonstrations of high-performance LN photonics, processing lithium niobate remains challenging and suffers from incompatibilities with standard complementary metal-oxide semiconductor (CMOS) fabrication lines, limiting its scalability. Silicon carbide (SiC) is an emerging material platform with a high refractive index, a large non-linear Kerr coefficient, and a promising candidate for heterogeneous integration with LN photonics. Current approaches of SiC/LN integration require transfer-bonding techniques, which are time-consuming, expensive, and lack precision in layer thickness. Here we show that amorphous silicon carbide (a-SiC), deposited using inductively coupled plasma enhanced chemical vapor deposition (ICPCVD) at low temperatures (< 165 C), can be conveniently integrated with LiNbO3 and processed to form high-performance photonics. Most importantly, the fabrication only involves a standard, silicon-compatible, reactive ion etching step and leaves the LiNbO3 intact, hence its compatibility with standard foundry processes. As a proof-of-principle, we fabricated waveguides and ring resonators on the developed a-SiC/LN platform and achieved intrinsic quality factors higher than 106,000 and resonance electro-optic tunability of 3.4 pm/V with 3 mm tuning length. We showcase the possibility of dense integration by fabricating and testing ring resonators with 40um radius without a noticeable loss penalty. Our platform offers a CMOS-compatible and scalable approach for implementation of future fast electro-optic modulators and reconfigurable photonic circuits as well as nonlinear processes which can benefit from involving both second and third-order nonlinearities. Comment: 9 pages, 4 figures |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2407.09350 |
| رقم الانضمام: | edsarx.2407.09350 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |