Report
Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride
العنوان: | Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride |
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المؤلفون: | Røst, Håkon I., Cooil, Simon P., Åsland, Anna Cecilie, Hu, Jinbang, Ali, Ayaz, Taniguchi, Takashi, Watanabe, Kenji, Belle, Branson D., Holst, Bodil, Sadowski, Jerzy T., Mazzola, Federico, Wells, Justin W. |
المصدر: | Nano Lett. 23, 16 (2023), 7539-7545 |
سنة النشر: | 2023 |
المجموعة: | Condensed Matter |
مصطلحات موضوعية: | Condensed Matter - Materials Science |
الوصف: | Understanding the collective behavior of the quasiparticles in solid-state systems underpins the field of non-volatile electronics, including the opportunity to control many-body effects for well-desired physical phenomena and their applications. Hexagonal boron nitride (hBN) is a wide energy bandgap semiconductor, showing immense potential as a platform for low-dimensional device heterostructures. It is an inert dielectric used for gated devices, having a negligible orbital hybridization when placed in contact with other systems. Despite its inertness, we discover a large electron mass enhancement in few-layer hBN affecting the lifetime of the $\pi$-band states. We show that the renormalization is phonon-mediated and consistent with both single- and multiple-phonon scattering events. Our findings thus unveil a so-far unknown many-body state in a wide-bandgap insulator, having important implications for devices using hBN as one of their building blocks. Comment: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright $\copyright$ 2022 The Authors, licensed under CC-BY 4.0 after peer review. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.3c02086 |
نوع الوثيقة: | Working Paper |
DOI: | 10.1021/acs.nanolett.3c02086 |
URL الوصول: | http://arxiv.org/abs/2308.13846 |
رقم الانضمام: | edsarx.2308.13846 |
قاعدة البيانات: | arXiv |
DOI: | 10.1021/acs.nanolett.3c02086 |
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