Report
A nanogapped hysteresis-free field-effect transistor
| العنوان: | A nanogapped hysteresis-free field-effect transistor |
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| المؤلفون: | Tang, Jiachen, Liu, Luhao, Shao, Yinjiang, Wang, Xinran, Shi, Yi, Li, Songlin |
| المصدر: | Applied Physics Letters, 121, 023503 (2022) |
| سنة النشر: | 2023 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science |
| الوصف: | We propose a semi-suspended device structure and construct nanogapped, hysteresis-free field-effect transistors (FETs), based on the van der Waals stacking technique. The structure, which features a semi-suspended channel above a submicron-long wedge-like nanogap, is fulfilled by transferring ultraclean BN-supported MoS$_2$ channels directly onto dielectric-spaced vertical source/drain stacks. Electronic characterization and analyses reveal a high overall device quality, including ultraclean channel interfaces, negligible electrical scanning hysteresis, and Ohmic contacts in the structures. The unique hollow FET structure holds the potential for exploiting reliable electronics, as well as nanofluid and pressure sensors. Comment: 22 pages, 4 figures, with SI |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1063/5.0097673 |
| URL الوصول: | http://arxiv.org/abs/2306.15690 |
| رقم الانضمام: | edsarx.2306.15690 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1063/5.0097673 |
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