التفاصيل البيبلوغرافية
| العنوان: |
Preferential bond formation and interstitial/vacancy annihilation rate drive atomic clustering in gallium ion sputtered compound materials |
| المؤلفون: |
Ma, Zhenyu, Zhang, Xin, Liu, Pu, Deng, Yong, Hu, Wenyu, Chen, Longqing, Zhu, Jun, Chen, Sen, Wang, Zhengshang, Shi, Yuechun, Ma, Jian, Wang, Xiaoyi, Qiu, Yang, Zhang, Kun, Cui, Xudong, Walther, Thomas |
| سنة النشر: |
2023 |
| المجموعة: |
Condensed Matter |
| مصطلحات موضوعية: |
Condensed Matter - Materials Science |
| الوصف: |
The investigation of chemical reactions during the ion irradiation is a frontier for the study of the ion-material interaction. In order to derive the contribution of bond formation to chemistry of ion produced nanoclusters, the valence electron energy loss spectroscopy (VEELS) was exploited to investigate the Ga$^+$ ion damage in Al$_2$O$_3$, InP and InGaAs, where each target material has been shown to yield different process for altering the clustering of recoil atoms: metallic Ga, metallic In and InGaP clusters in Al$_2$O$_3$, InP and InGaAs respectively. Supporting simulations based on Monte Carlo and crystal orbital Hamiltonianindicate that the chemical constitution of cascade induced nano-precipitates is a result of a competition between interstitial/vacancy consumption rate and preferential bond formation. |
| نوع الوثيقة: |
Working Paper |
| URL الوصول: |
http://arxiv.org/abs/2305.13746 |
| رقم الانضمام: |
edsarx.2305.13746 |
| قاعدة البيانات: |
arXiv |