التفاصيل البيبلوغرافية
| العنوان: |
Chip-scale, CMOS-compatible, high energy passively Q-switched laser |
| المؤلفون: |
Singh, Neetesh, Lorenzen, Jan, Sinobad, Milan, Wang, Kai, Liapis, Andreas C., Frankis, Henry, Haugg, Stefanie, Francis, Henry, Carreira, Jose, Geiselmann, Michael, Gaafar, Mahmoud A., Herr, Tobias, Bradley, Jonathan D. B., Sun, Zhipei, Garcia-Blanco, Sonia M, Kartner, Franz X. |
| سنة النشر: |
2023 |
| المجموعة: |
Physics (Other) |
| مصطلحات موضوعية: |
Physics - Optics |
| الوصف: |
Chip-scale, high-energy optical pulse generation is becoming increasingly important as we expand activities into hard to reach areas such as space and deep ocean. Q-switching of the laser cavity is the best known technique for generating high-energy pulses, and typically such systems are in the realm of large bench-top solid-state lasers and fiber lasers, especially in the long wavelength range >1.8 um, thanks to their large energy storage capacity. However, in integrated photonics, the very property of tight mode confinement, that enables a small form factor, becomes an impediment to high energy application due to small optical mode cross-section. In this work, we demonstrate complementary metal-oxide-semiconductor (CMOS) compatible, rare-earth gain based large mode area (LMA) passively Q-switched laser in a compact footprint. We demonstrate high on-chip output pulse energy of >150 nJ in single transverse fundamental mode in the eye-safe window (1.9 um), with a slope efficiency ~ 40% in a footprint of ~9 mm2. The high energy pulse generation demonstrated in this work is comparable or in many cases exceeds Q-switched fiber lasers. This bodes well for field applications in medicine and space. |
| نوع الوثيقة: |
Working Paper |
| URL الوصول: |
http://arxiv.org/abs/2303.00849 |
| رقم الانضمام: |
edsarx.2303.00849 |
| قاعدة البيانات: |
arXiv |