Report
Proximity-Induced Superconductivity in Epitaxial Topological Insulator/Graphene/Gallium Heterostructures
| العنوان: | Proximity-Induced Superconductivity in Epitaxial Topological Insulator/Graphene/Gallium Heterostructures |
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| المؤلفون: | Li, Cequn, Zhao, Yi-Fan, Vera, Alexander, Lesser, Omri, Yi, Hemian, Kumari, Shalini, Yan, Zijie, Dong, Chengye, Bowen, Timothy, Wang, Ke, Wang, Haiying, Thompson, Jessica L., Watanabe, Kenji, Taniguchi, Takashi, Hickey, Danielle Reifsnyder, Oreg, Yuval, Robinson, Joshua A., Chang, Cui-Zu, Zhu, Jun |
| سنة النشر: | 2022 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science, Condensed Matter - Superconductivity |
| الوصف: | The introduction of superconductivity to the Dirac surface states of a topological insulator leads to a topological superconductor, which may support topological quantum computing through Majorana zero modes. The development of a scalable material platform is key to the realization of topological quantum computing. Here we report on the growth and properties of high-quality (Bi,Sb)2Te3/graphene/gallium heterostructures. Our synthetic approach enables atomically sharp layers at both hetero-interfaces, which in turn promotes proximity-induced superconductivity that originates in the gallium film. A lithography-free, van der Waals tunnel junction is developed to perform transport tunneling spectroscopy. We find a robust, proximity-induced superconducting gap formed in the Dirac surface states in 5-10 quintuple-layer (Bi,Sb)2Te3/graphene/gallium heterostructures. The presence of a single Abrikosov vortex, where the Majorana zero modes are expected to reside, manifests in discrete conductance changes. The present material platform opens up opportunities for understanding and harnessing the application potential of topological superconductivity. Comment: 19 pages, 4 figures, with a Supplemental Information. Comments are welcome |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1038/s41563-023-01478-4 |
| URL الوصول: | http://arxiv.org/abs/2205.02806 |
| رقم الانضمام: | edsarx.2205.02806 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1038/s41563-023-01478-4 |
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