Report
Low Resistance III-V Hetero-contacts to N-Ge
| العنوان: | Low Resistance III-V Hetero-contacts to N-Ge |
|---|---|
| المؤلفون: | Suh, Junkyo, Ramesh, Pranav, Meng, Andrew C., Kumar, Aravindh, Kumar, Archana, Gupta, Shashank, Islam, Raisul, McIntyre, Paul C., Saraswat, Krishna |
| سنة النشر: | 2021 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | We experimentally study III-V/Ge heterostructure and demonstrate InGaAs hetero-contacts to n-Ge with a wide range of In % and achieve low contact resistivity ($\rho_C$) of $5\times10^{-8} \Omega\cdot cm^2$ for Ge doping of $3 \times 10^{19} cm^{-3}$. This results from re-directing the charge neutrality level (CNL) near the conduction band and benefiting from low effective mass for high electron transmission. For the first time, we observe that the heterointerface presents no temperature dependence despite the two different conduction minimum valley locations of III-V ($\Gamma$-valley) and Ge (L-valley), which potentially stems from elastic trap-assisted tunneling through defect states at the interface generated by dislocations. The hetero-interface plays a dominant role in the overall $\rho_C$ below $\approx 1 \times 10^{-7} \Omega \cdot cm^2$, which can be further improved with large active dopant concentration in Ge by co-doping. Comment: 2 pages, 16 figures; Accepted in SSDM 2017 |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2106.15099 |
| رقم الانضمام: | edsarx.2106.15099 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |