التفاصيل البيبلوغرافية
| العنوان: |
Charge carrier density, mobility and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals |
| المؤلفون: |
Boy, Johannes, Handwerg, Martin, Mitdank, Rüdiger, Galazka, Zbigniew, Fischer, Saskia F. |
| سنة النشر: |
2020 |
| المجموعة: |
Condensed Matter |
| مصطلحات موضوعية: |
Condensed Matter - Materials Science |
| الوصف: |
The temperature dependence of the charge carrier density, mobility and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about s = 286 S/cm due to a high electron concentration of n = 3.26*10^(19) cm^(-3), caused by unintenional doping. The mobility at room temperature is mu = 55 cm^2/Vs, whereas the scattering on ionized impurities limits the mobility to mu =62 cm^2/Vs for temperatures lower than 180 K. The Seebeck coefficient relative to aluminum at room temperature is S_(ZnGa2O4-Al) = (-125+-2) muV/K and shows a temperature dependence as expected for degenerate semiconductors. At low temperatures, around 60 K we observed a maximum of the Seebeck coefficient due to the phonon drag effect. |
| نوع الوثيقة: |
Working Paper |
| DOI: |
10.1063/5.0002847 |
| URL الوصول: |
http://arxiv.org/abs/2001.10324 |
| رقم الانضمام: |
edsarx.2001.10324 |
| قاعدة البيانات: |
arXiv |