Report
Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy
| العنوان: | Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy |
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| المؤلفون: | Schaab, J., Shapovalov, K., Schoenherr, P., Hackl, J., Khan, M. I., Hentschel, M., Yan, Z., Bourret, E., Schneider, C. M., Nemsák, S., Stengel, M., Cano, A., Meier, D. |
| المصدر: | Appl. Phys. Lett. 115, 122903 (2019) |
| سنة النشر: | 2020 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science |
| الوصف: | Low-temperature X-ray photoemission electron microscopy (X-PEEM) is used to measure the electric potential at domain walls in improper ferroelectric Er0.99Ca0.01MnO3. By combining X-PEEM with scanning probe microscopy and theory, we develop a model that relates the detected X-PEEM contrast to the emergence of uncompensated bound charges, explaining the image formation based on intrinsic electronic domain-wall properties. In contrast to previously applied low-temperature electrostatic force microscopy (EFM), X-PEEM readily distinguishes between positive and negative bound charges at domain walls. Our study introduces an X-PEEM based approach for low-temperature electrostatic potential mapping, facilitating nanoscale spatial resolution and data acquisition times in the order of 0.1-1 sec. Comment: 15 pages, 6 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1063/1.5117881 |
| URL الوصول: | http://arxiv.org/abs/2001.04894 |
| رقم الانضمام: | edsarx.2001.04894 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1063/1.5117881 |
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