Report
Gallium Nitride FET Model
| العنوان: | Gallium Nitride FET Model |
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| المؤلفون: | Zebrev, G. I., Orlov, V. V. |
| المصدر: | IOP Conf. Ser.: Mater. Sci. Eng. 475 012007 2019 |
| سنة النشر: | 2019 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Physics - Applied Physics, Condensed Matter - Materials Science |
| الوصف: | We have presented an analytical physics-based compact model of GaN power FET, which can accurately describe the I-V characteristics in all operation modes. The model considers the source-drain resistance, different interface trap densities and self-heating effects. Comment: IOP Conference Series: Materials Science and Engineering, 5 pages, 2 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1088/1757-899X/475/1/012007 |
| URL الوصول: | http://arxiv.org/abs/1909.05702 |
| رقم الانضمام: | edsarx.1909.05702 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1088/1757-899X/475/1/012007 |
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