التفاصيل البيبلوغرافية
| العنوان: |
A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology |
| المؤلفون: |
Iacobucci, G., Cardarelli, R., Débieux, S., Di Bello, F. A., Favre, Y., Hayakawa, D., Kaynak, M., Nessi, M., Paolozzi, L., Rücker, H., Sultan, DMS, Valerio, P. |
| سنة النشر: |
2019 |
| المجموعة: |
Physics (Other) |
| مصطلحات موضوعية: |
Physics - Instrumentation and Detectors |
| الوصف: |
A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concept chip contains hexagonal pixels of 65 {\mu}m and 130 {\mu}m side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 electrons for a pixel capacitance of 70 and 220 fF, respectively, and a total time walk of less than 1 ns. Lab measurements with a 90Sr source show a time resolution of the order of 50 ps. This result is competitive with silicon technologies that integrate an avalanche gain mechanism. |
| نوع الوثيقة: |
Working Paper |
| DOI: |
10.1088/1748-0221/14/11/P11008 |
| URL الوصول: |
http://arxiv.org/abs/1908.09709 |
| رقم الانضمام: |
edsarx.1908.09709 |
| قاعدة البيانات: |
arXiv |