التفاصيل البيبلوغرافية
| العنوان: |
Pressure-induced Insulator to Metal Transition of Mixed Valence Compound Ce(O,F)SbS$_{2}$ |
| المؤلفون: |
Matsumoto, Ryo, Nagao, Masanori, Ochi, Masayuki, Tanaka, Hiromi, Hara, Hiroshi, Adachi, Shintaro, Nakamura, Kazuki, Murakami, Ryo, Yamamoto, Sayaka, Irifune, Tetsuo, Takeya, Hiroyuki, Tanaka, Isao, Kuroki, Kazuhiko, Takano, Yoshihiko |
| المصدر: |
J.Appl. Phys.125,075102, (2019) |
| سنة النشر: |
2018 |
| المجموعة: |
Condensed Matter |
| مصطلحات موضوعية: |
Condensed Matter - Materials Science |
| الوصف: |
Transport properties of Ce$_{0.85}$F0.15SbS$_{2}$ and undoped CeOSbS$_{2}$ under high pressure were investigated experimentally and theoretically. Electrical resistivity measurements of the Ce$_{0.85}$F0.15SbS$_{2}$ single crystals were performed under various high pressures using a diamond anvil cell with boron-doped diamond electrodes. The samples showed the insulator to metal transition by applying high pressure up to 30-40 GPa. On the other hand, the undoped CeOSbS$_{2}$ showed almost same transport property with the F-doped sample under high pressure. The valence state analysis using X-ray photoelectron spectroscopy revealed a simple valence state of Ce3+ in Ce$_{0.85}$F0.15SbS$_{2}$ and mixed valence state between Ce3+ and Ce4+ in undoped CeOSbS$_{2}$. The valence fluctuation in Ce carried out the comparable transport nature in the both samples. A band calculation suggests that the undoped CeOSbS$_{2}$ could be metallic under high pressure of 30 GPa in accordance with the experimental results. A superior thermoelectric property of power factor in CeOSbS$_{2}$ was estimated under high pressure around 20 GPa in comparison with that of ambient pressure. |
| نوع الوثيقة: |
Working Paper |
| DOI: |
10.1063/1.5079765 |
| URL الوصول: |
http://arxiv.org/abs/1811.01151 |
| رقم الانضمام: |
edsarx.1811.01151 |
| قاعدة البيانات: |
arXiv |