Report
Induced spin-orbit coupling in silicon thin films by bismuth doping
| العنوان: | Induced spin-orbit coupling in silicon thin films by bismuth doping |
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| المؤلفون: | Rortais, F., Lee, S., Ohshima, R., Dushenko, S., Ando, Y., Shiraishi, M. |
| المصدر: | Appl. Phys. Lett. 113, 122408 (2018) |
| سنة النشر: | 2018 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science |
| الوصف: | We demonstrate an enhancement of the spin-orbit coupling in silicon (Si) thin films by doping with bismuth (Bi), a heavy metal, using ion implantation. Quantum corrections to conductance at low temperature in phosphorous-doped Si before and after Bi implantation is measured to probe the increase of the spin-orbit coupling, and a clear modification of magnetoconductance signals is observed: Bi doping changes magnetoconductance from weak localization to the crossover between weak localization and weak antilocalization. The elastic diffusion length, phase coherence length and spin-orbit coupling length in Si with and without Bi implantation are estimated, and the spin-orbit coupling length after the Bi doping becomes the same order of magnitude (Lso = 54 nm) with the phase coherence length (L{\phi} = 35 nm) at 2 K. This is an experimental proof that the spin-orbit coupling strength in Si thin film is tunable by doping with heavy metals. Comment: 13 pages, 3 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1063/1.5046781 |
| URL الوصول: | http://arxiv.org/abs/1810.06878 |
| رقم الانضمام: | edsarx.1810.06878 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1063/1.5046781 |
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