Engineering the thermal conductivity along an individual silicon nanowire by selective helium ion irradiation

التفاصيل البيبلوغرافية
العنوان: Engineering the thermal conductivity along an individual silicon nanowire by selective helium ion irradiation
المؤلفون: Zhao, Yunshan, Liu, Dan, Chen, Jie, Zhu, Liyan, Belianinov, Alex, Ovchinnikova, Olga S., Unocic, Raymond R., Burch, Matthew J., Kim, Songkil, Hao, Hanfang, Pickard, Daniel S, Li, Baowen, Thong, John T L
المصدر: Nature Communications 8, Article number: 15919 (2017)
سنة النشر: 2017
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Materials Science
الوصف: The ability to engineer the thermal conductivity of materials allows us to control the flow of heat and derive novel functionalities such as thermal rectification, thermal switching, and thermal cloaking. While this could be achieved by making use of composites and metamaterials at bulk scales, engineering the thermal conductivity at micro- and nano-scale dimensions is considerably more challenging. In this work we show that the local thermal conductivity along a single Si nanowire can be tuned to a desired value (between crystalline and amorphous limits) with high spatial resolution through selective helium ion irradiation with a well-controlled dose. The underlying mechanism is understood through molecular dynamics simulations and quantitative phonon-defect scattering rate analysis, where the behavior of thermal conductivity with dose is attributed to the accumulation and agglomeration of scattering centers at lower doses. Beyond a threshold dose, a crystalline-amorphous transition was observed.
نوع الوثيقة: Working Paper
DOI: 10.1038/ncomms15919
URL الوصول: http://arxiv.org/abs/1705.06845
رقم الانضمام: edsarx.1705.06845
قاعدة البيانات: arXiv