Report
All-thermal transistor based on stochastic switching
| العنوان: | All-thermal transistor based on stochastic switching |
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| المؤلفون: | Sánchez, Rafael, Thierschmann, Holger, Molenkamp, Laurens W. |
| المصدر: | Phys. Rev. B 95, 241401 (2017) |
| سنة النشر: | 2017 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | Fluctuations are strong in mesoscopic systems and have to be taken into account for the description of transport. We show that they can even be used as a resource for the operation of a system as a device. We use the physics of single-electron tunneling to propose a bipartite device working as a thermal transistor. Charge and heat currents in a two terminal conductor can be gated by thermal fluctuations from a third terminal to which it is capacitively coupled. The gate system can act as a switch that injects neither charge nor energy into the conductor hence achieving huge amplification factors. Non-thermal properties of the tunneling electrons can be exploited to operate the device with no energy consumption. Comment: 5 pages, 3 figures. Published version |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1103/PhysRevB.95.241401 |
| URL الوصول: | http://arxiv.org/abs/1701.00382 |
| رقم الانضمام: | edsarx.1701.00382 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1103/PhysRevB.95.241401 |
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