Report
Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade
| العنوان: | Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade |
|---|---|
| المؤلفون: | Rymaszewski, Piotr, Barbero, Marlon, Breugnon, Patrick, Godiot, Stépahnie, Gonella, Laura, Hemperek, Tomasz, Hirono, Toko, Hügging, Fabian, Krüger, Hans, Liu, Jian, Pangaud, Patrick, Peric, Ivan, Rozanov, Alexandre, Wang, Anqing, Wermes, Norbert |
| سنة النشر: | 2016 |
| المجموعة: | High Energy Physics - Experiment Physics (Other) |
| مصطلحات موضوعية: | Physics - Instrumentation and Detectors, High Energy Physics - Experiment |
| الوصف: | The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results. Comment: 9 pages, 9 figures, TWEPP 2015 Conference, submitted to JINST |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1088/1748-0221/11/02/C02045 |
| URL الوصول: | http://arxiv.org/abs/1601.00459 |
| رقم الانضمام: | edsarx.1601.00459 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1088/1748-0221/11/02/C02045 |
|---|