Report
InAs nanowire transistors with multiple, independent wrap-gate segments
| العنوان: | InAs nanowire transistors with multiple, independent wrap-gate segments |
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| المؤلفون: | Burke, A. M., Carrad, D. J., Gluschke, J. G., Storm, K., Svensson, S. Fahlvik, Linke, H., Samuelson, L., Micolich, A. P. |
| سنة النشر: | 2015 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favourable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures. Comment: 18 pages, 5 figures, In press for Nano Letters (DOI below) |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1021/nl5043243 |
| URL الوصول: | http://arxiv.org/abs/1505.01689 |
| رقم الانضمام: | edsarx.1505.01689 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1021/nl5043243 |
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