التفاصيل البيبلوغرافية
| العنوان: |
Two dimensional electrons in (100) oriented silicon field effect structures in the region of low concentrations and high mobilities |
| المؤلفون: |
Dolgopolov, V. T. |
| المصدر: |
JETP Letters, 101, 300 (2015) |
| سنة النشر: |
2015 |
| المجموعة: |
Condensed Matter |
| مصطلحات موضوعية: |
Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: |
A comparative analysis of experimental data on electron transport in Si (100) MOSFETs in the region of high mobilities and strong electronelectron interaction is carried out. It is shown that electrons can be described by the model of a noninteracting gas with the renormalized mass and Lande factor, which allows experimentally verifiable predictions. |
| نوع الوثيقة: |
Working Paper |
| DOI: |
10.1134/S0021364015040062 |
| URL الوصول: |
http://arxiv.org/abs/1504.07537 |
| رقم الانضمام: |
edsarx.1504.07537 |
| قاعدة البيانات: |
arXiv |