Report
Isolated electron spins in silicon carbide with millisecond-coherence times
| العنوان: | Isolated electron spins in silicon carbide with millisecond-coherence times |
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| المؤلفون: | Christle, David J., Falk, Abram L., Andrich, Paolo, Klimov, Paul V., Hassan, Jawad ul, Son, Nguyen T., Janzén, Erik, Ohshima, Takeshi, Awschalom, David D. |
| سنة النشر: | 2014 |
| المجموعة: | Condensed Matter Quantum Physics |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science, Quantum Physics |
| الوصف: | The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions, they are increasingly recognized as a valuable resource for quantum-information and nanoscale-sensing applications. Here, we show that individual electron spin states in highly purified monocrystalline 4H-SiC can be isolated and coherently controlled. Bound to neutral divacancy defects, these states exhibit exceptionally long ensemble Hahn-echo spin coherence, exceeding 1 ms. Coherent control of single spins in a material amenable to advanced growth and microfabrication techniques is an exciting route to wafer-scale quantum technologies. Comment: 11 pages, 3 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1038/nmat4144 |
| URL الوصول: | http://arxiv.org/abs/1406.7325 |
| رقم الانضمام: | edsarx.1406.7325 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1038/nmat4144 |
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