التفاصيل البيبلوغرافية
| العنوان: |
Static Non-linearity in Graphene Field Effect Transistors |
| المؤلفون: |
Rodriguez, Saul, Smith, Anderson, Vaziri, Sam, Ostling, Mikael, Lemme, Max C., Rusu, Ana |
| المصدر: |
IEEE Transactions on Electron Devices, 61(8): 3001-3003, 2014 |
| سنة النشر: |
2014 |
| المجموعة: |
Condensed Matter |
| مصطلحات موضوعية: |
Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: |
The static linearity performance metrics of the GFET transconductor are studied and modeled. Closed expressions are proposed for second and third order harmonic distortion (HD2, HD3), second and third order intermodulation distortion ({\Delta}IM2), {\Delta}IM3), and second and third order intercept points (AIIP2, AIIP3). The expressions are validated through large-signal simulations using a GFET VerilogA analytical model and a commercial circuit simulator. The proposed expressions can be used during circuit design in order to predict the GFET biasing conditions at which linearity requirements are met. |
| نوع الوثيقة: |
Working Paper |
| DOI: |
10.1109/TED.2014.2326887 |
| URL الوصول: |
http://arxiv.org/abs/1405.2142 |
| رقم الانضمام: |
edsarx.1405.2142 |
| قاعدة البيانات: |
arXiv |