Report
Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer
| العنوان: | Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer |
|---|---|
| المؤلفون: | Tao, Li, Holt, Milo, Lee, Jongho, Chou, Harry, McDonnell, Stephen J., Ferrer, Domingo A., Babenco, Matias, Wallace, Robert M., Banerjee, Sanjay K., Ruoff, Rodney S., Akinwande, Deji |
| سنة النشر: | 2012 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Condensed Matter - Materials Science, Physics - Chemical Physics |
| الوصف: | Monolayer graphene has been grown on crystallized Cu (111) films on standard oxidized Si 100 mm wafers. The monolayer graphene demonstrates high uniformity (>97% coverage), with immeasurable defects (>95% defect-negligible) across the entire wafer. Key to these results is the phase transition of evaporated copper films from amorphous to crystalline at the growth temperature as corroborated by X-ray diffraction and electron backscatter diffraction. Noticeably, phase transition of copper film is observed on technologically ubiquitous oxidized Si wafer where the oxide is a standard amorphous thermal oxide. Ion mass spectroscopy indicates that the copper films can be purposely hydrogen-enriched during a hydrogen anneal which subsequently affords graphene growth with a sole carbonaceous precursor for low defect densities. Owing to the strong hexagonal lattice match, the graphene domains align to the Cu (111) domains, suggesting a pathway for increasing the graphene grains by maximizing the copper grain sizes. Fabricated graphene transistors on a flexible polyimide film yield a peak carrier mobility ~4,930 cm2/Vs. |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/1205.1546 |
| رقم الانضمام: | edsarx.1205.1546 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |