Report
Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors
| العنوان: | Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors |
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| المؤلفون: | Prati, Enrico, De Michielis, Marco, Belli, Matteo, Cocco, Simone, Fanciulli, Marco, Kotekar-Patil, Dharmraj, Ruoff, Matthias, Kern, Dieter P., Wharam, David A., Verduijn, Arjan, Tettamanzi, Giuseppe, Rogge, Sven, Roche, Benoit, Wacquez, Romain, Jehl, Xavier, Vinet, Maud, Sanquer, Marc |
| سنة النشر: | 2012 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 $\times$ 20 nm$^{2}$ is obtained by employing electron beam lithography for active and gate levels patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a Current Spin Density Functional Theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronics and quantum variables based devices. Comment: 4 Figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1088/0957-4484/23/21/215204 |
| URL الوصول: | http://arxiv.org/abs/1203.4811 |
| رقم الانضمام: | edsarx.1203.4811 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1088/0957-4484/23/21/215204 |
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