Report
Reduction of optical reflection from InP semiconductor wafers after high-temperature annealing
| العنوان: | Reduction of optical reflection from InP semiconductor wafers after high-temperature annealing |
|---|---|
| المؤلفون: | Semyonov, Oleg G., Subashiev, Arsen V., Shabalov, Alexander, Lifshitz, Nadia, Chen, Zhichao, Hosoda, Takashi, Luryi, Serge |
| سنة النشر: | 2011 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Condensed Matter - Materials Science, Physics - Optics |
| الوصف: | We observed and studied strong reduction of optical reflection from the surface of InP wafers after high-temperature annealing. The effect is observed over a wide range of the incident wavelengths, and in the transparency band of the material it is accompanied by increasing transmission. The spectral position of a minimum (almost zero) of the reflection coefficient can be tuned, by varying the temperature and the time of annealing, in the spectral range between 0.5 and 6 eV. The effect is explained by the formation of a uniform oxide layer, whose parameters (thicknesses and average index) are estimated by detailed modeling. Comment: 20 pages, 11 figures, submitted to Journal of Applied physics |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/1112.5398 |
| رقم الانضمام: | edsarx.1112.5398 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |