Report
Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels
| العنوان: | Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels |
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| المؤلفون: | Li, Song-Lin, Miyazaki, Hisao, Hiura, Hidefumi, Liu, Chuan, Tsukagoshi, Kazuhito |
| المصدر: | ACS Nano 5 (2011) 500-506 |
| سنة النشر: | 2010 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science |
| الوصف: | Realization of logic circuits in graphene with an energy gap (EG) remains one of the main challenges for graphene electronics. We found that large transport EGs (>100 meV) can be fulfilled in dual-gated bilayer graphene underneath a simple alumina passivation top gate stack, which directly contacts the graphene channels without an inserted buffer layer. With the presence of EGs, the electrical properties of the graphene transistors are significantly enhanced, as manifested by enhanced on/off current ratio, subthreshold slope and current saturation. For the first time, complementary-like semiconducting logic graphene inverters are demonstrated that show a large improvement over their metallic counterparts. This result may open the way for logic applications of gap-engineered graphene. Comment: Accepted by ACS Nano |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1021/nn102346b |
| URL الوصول: | http://arxiv.org/abs/1012.3317 |
| رقم الانضمام: | edsarx.1012.3317 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1021/nn102346b |
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