Report
Raman study of Fano interference in p-type doped silicon
| العنوان: | Raman study of Fano interference in p-type doped silicon |
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| المؤلفون: | Burke, Brian G., Chan, Jack, Williams, Keith A., Wu, Zili, Puretzky, Alexander A., Geohegan, David B. |
| سنة النشر: | 2009 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Condensed Matter - Materials Science, Physics - Optics |
| الوصف: | As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter-valence band transitions on the zone center optical phonon in heavily p-type doped silicon is studied by Raman spectroscopy for a wide range of excitation wavelengths extending from the red (632.8 nm) into the ultra-violet (325 nm). The asymmetry in the one-phonon Raman lineshape is attributed to a Fano interference involving the overlap of a continuum of electronic excitations with a discrete phonon state. We identify a transition above and below the one-dimensional critical point (E = 3.4 eV) in the electronic excitation spectrum of silicon. The relationship between the anisotropic silicon band structure and the penetration depth is discussed in the context of possible device applications. Comment: 6 pages, 7 figures, paper |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1002/jrs.2614 |
| URL الوصول: | http://arxiv.org/abs/0910.5244 |
| رقم الانضمام: | edsarx.0910.5244 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1002/jrs.2614 |
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